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IS41C16105 IS41LV16105
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
FEATURES
* TTL compatible inputs and outputs; tristate I/O * Refresh Interval: -- 1,024 cycles/16 ms * Refresh Mode: -- RAS-Only, CAS-before-RAS (CBR), and Hidden * JEDEC standard pinout * Single power supply: -- 5V 10% (IS41C16105) -- 3.3V 10% (IS41LV16105) * Byte Write and Byte Read operation via two CAS * Extended Temperature Range -30oC to 85oC * Industrail Temperature Range -40oC to 85oC
ISSI
DESCRIPTION
(R)
FEBRUARY 2000
The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16105 ideal for use in 16-, 32-bit wide data bus systems. These features make the IS41C16105 and IS41LV16105 ideally suited for high-bandwidth graphics, digital signal processing, highperformance computing systems, and peripheral applications. The IS41C16105 and IS41LV16105 are packaged in a 42-pin 400-mil SOJ and 400-mil 44- (50-) pin TSOP (Type II).
KEY TIMING PARAMETERS
Parameter Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC) Max. Column Address Access Time (tAA) Min. Fast Page Mode Cycle Time (tPC) Min. Read/Write Cycle Time (tRC) -50 50 13 25 20 84 -60 60 15 30 25 104 Unit ns ns ns ns ns
PIN CONFIGURATIONS
44(50)-Pin TSOP (Type II) 42-Pin SOJ
VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC NC NC WE RAS NC NC A0 A1 A2 A3 VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
GND I/O15 I/O14 I/O13 I/O12 GND I/O11 I/O10 I/O9 I/O8 NC NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 GND
VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC NC WE RAS NC NC A0 A1 A2 A3 VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21
42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22
GND I/O15 I/O14 I/O13 I/O12 GND I/O11 I/O10 I/O9 I/O8 NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 GND
PIN DESCRIPTIONS
A0-A9 I/O0-15 WE OE RAS UCAS LCAS Vcc GND NC Address Inputs Data Inputs/Outputs Write Enable Output Enable Row Address Strobe Upper Column Address Strobe Lower Column Address Strobe Power Ground No Connection
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. (c) Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. A 03/03/00
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IS41C16105 IS41LV16105
FUNCTIONAL BLOCK DIAGRAM
ISSI
(R)
OE WE LCAS UCAS CAS CLOCK GENERATOR WE CONTROL LOGICS OE CONTROL LOGIC OE
CAS
WE
RAS
RAS CLOCK GENERATOR
DATA I/O BUS
REFRESH COUNTER
DATA I/O BUFFERS
ROW DECODER
RAS
COLUMN DECODERS SENSE AMPLIFIERS
I/O0-I/O15
MEMORY ARRAY 1,048,576 x 16
ADDRESS BUFFERS A0-A9
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IS41C16105 IS41LV16105
TRUTH TABLE
Function Standby Read: Word Read: Lower Byte Read: Upper Byte Write: Word (Early Write) Write: Lower Byte (Early Write) Write: Upper Byte (Early Write) Read-Write(1,2) Hidden Refresh RAS-Only Refresh CBR Refresh
(4)
ISSI
RAS H L L L L L L L Read(2) Write(1,3) LHL LHL L HL LCAS H L L H L L H L L L H L UCAS H L H L L H L L L L H L WE X H H H L L L HL H L X X OE X L L L X X X LH L X X X Address tR/tC X ROW/COL ROW/COL ROW/COL ROW/COL ROW/COL ROW/COL ROW/COL ROW/COL ROW/COL ROW/NA X I/O High-Z DOUT Lower Byte, DOUT Upper Byte, High-Z Lower Byte, High-Z Upper Byte, DOUT DIN Lower Byte, DIN Upper Byte, High-Z Lower Byte, High-Z Upper Byte, DIN DOUT, DIN DOUT DOUT High-Z High-Z
(R)
Notes: 1. These WRITE cycles may also be BYTE WRITE cycles (either LCAS or UCAS active). 2. These READ cycles may also be BYTE READ cycles (either LCAS or UCAS active). 3. EARLY WRITE only. 4. At least one of the two CAS signals must be active (LCAS or UCAS).
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3
IS41C16105 IS41LV16105
Functional Description
The IS41C16105 and IS41LV16105 is a CMOS DRAM optimized for high-speed bandwidth, low power applications. During READ or WRITE cycles, each bit is uniquely addressed through the 16 address bits. These are entered ten bits (A0-A9) at a time. The row address is latched by the Row Address Strobe (RAS). The column address is latched by the Column Address Strobe (CAS). RAS is used to latch the first nine bits and CAS is used the latter nine bits. The IS41C16105 and IS41LV16105 has two CAS controls, LCAS and UCAS. The LCAS and UCAS inputs internally generates a CAS signal functioning in an identical manner to the single CAS input on the other 1M x 16 DRAMs. The key difference is that each CAS controls its corresponding I/O tristate logic (in conjunction with OE and WE and RAS). LCAS controls I/O0 through I/O7 and UCAS controls I/O8 through I/O15. The IS41C16105 and IS41LV16105 CAS function is determined by the first CAS (LCAS or UCAS) transitioning LOW and the last transitioning back HIGH. The two CAS controls give the IS41C16105 and IS41LV16105 both BYTE READ and BYTE WRITE cycle capabilities.
ISSI
Write Cycle
(R)
A write cycle is initiated by the falling edge of CAS and WE, whichever occurs last. The input data must be valid at or before the falling edge of CAS or WE, whichever occurs last.
Refresh Cycle
To retain data, 1,024 refresh cycles are required in each 16 ms period. There are two ways to refresh the memory. 1. By clocking each of the 1,024 row addresses (A0 through A9) with RAS at least once every 16 ms. Any read, write, read-modify-write or RAS-only cycle refreshes the addressed row. 2. Using a CAS-before-RAS refresh cycle. CAS-beforeRAS refresh is activated by the falling edge of RAS, while holding CAS LOW. In CAS-before-RAS refresh cycle, an internal 9-bit counter provides the row addresses and the external address inputs are ignored. CAS-before-RAS is a refresh-only mode and no data access or device selection is allowed. Thus, the output remains in the High-Z state during the cycle.
Power-On
After application of the VCC supply, an initial pause of 200 s is required followed by a minimum of eight initialization cycles (any combination of cycles containing a RAS signal). During power-on, it is recommended that RAS track with VCC or be held at a valid VIH to avoid current surges.
Memory Cycle
A memory cycle is initiated by bring RAS LOW and it is terminated by returning both RAS and CAS HIGH. To ensures proper device operation and data integrity any memory cycle, once initiated, must not be ended or aborted before the minimum tRAS time has expired. A new cycle must not be initiated until the minimum precharge time tRP, tCP has elapsed.
Read Cycle
A read cycle is initiated by the falling edge of CAS or OE, whichever occurs last, while holding WE HIGH. The column address must be held for a minimum time specified by tAR. Data Out becomes valid only when tRAC, tAA, tCAC and tOEA are all satisfied. As a result, the access time is dependent on the timing relationships between these parameters.
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IS41C16105 IS41LV16105
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VT VCC IOUT PD TA Parameters Voltage on Any Pin Relative to GND Supply Voltage Output Current Power Dissipation Commercial Operation Temperature Extended Temperature Industrail Temperature Storage Temperature 5V 3.3V 5V 3.3V Rating -1.0 to +7.0 -0.5 to +4.6 -1.0 to +7.0 -0.5 to +4.6 50 1 0 to +70 -30 to +85 -40 to +85 -55 to +125 Unit V V mA W C C C C
ISSI
(R)
TSTG
Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol VCC VIH VIL TA Parameter Supply Voltage Input High Voltage Input Low Voltage Commercial Ambient Temperature Extended Ambient Temperature Industrail Ambient Temperature 5V 3.3V 5V 3.3V 5V 3.3V Min. 4.5 3.0 2.4 2.0 -1.0 -0.3 0 -30 -40 Typ. 5.0 3.3 -- -- -- -- -- -- -- Max. 5.5 3.6 VCC + 1.0 VCC + 0.3 0.8 0.8 70 85 85 Unit V V V C C C
CAPACITANCE(1,2)
Symbol CIN1 CIN2 CIO Parameter Input Capacitance: A0-A9 Input Capacitance: RAS, UCAS, LCAS, WE, OE Data Input/Output Capacitance: I/O0-I/O15 Max. 5 7 7 Unit pF pF pF
Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25C, f = 1 MHz,
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IS41C16105 IS41LV16105
ELECTRICAL CHARACTERISTICS(1)
(Recommended Operating Conditions unless otherwise noted.) Symbol Parameter IIL IIO VOH VOL ICC1 Input Leakage Current Output Leakage Current Output High Voltage Level Output Low Voltage Level Standby Current: TTL Test Condition Any input 0V VIN Vcc Other inputs not under test = 0V Output is disabled (Hi-Z) 0V VOUT Vcc IOH = -5.0 mA (5V) IOH = -2.0 mA (3.3V) IOL = 4.2 mA (5V) IOL = 2.0 mA (3.3V) RAS, LCAS, UCAS VIH Commerical Extended/Idustrial ICC2 ICC3 Standby Current: CMOS Operating Current: Random Read/Write(2,3,4) Average Power Supply Current Operating Current: Fast Page Mode(2,3,4) Average Power Supply Current Refresh Current: RAS-Only(2,3) Average Power Supply Current Refresh Current: CBR(2,3,5) Average Power Supply Current RAS, LCAS, UCAS VCC - 0.2V 5V 3.3V 5V 3.3V 5V 3.3V -50 -60 -50 -60 -50 -60 -50 -60 Speed Min. -5 -5 2.4 --
ISSI
Max. 5 5 -- 0.4 A A V V
(R)
Unit
-- -- -- -- -- -- -- -- -- -- -- -- -- --
3 3 4 4 2 2 160 145 90 80 160 145 160 145
mA mA mA mA
RAS, LCAS, UCAS, Address Cycling, tRC = tRC (min.) RAS = VIL, LCAS, UCAS, Cycling tPC = tPC (min.) RAS Cycling, LCAS, UCAS VIH tRC = tRC (min.) RAS, LCAS, UCAS Cycling tRC = tRC (min.)
ICC4
mA
ICC5
mA
ICC6
mA
Notes: 1. An initial pause of 200 s is required after power-up followed by eight RAS refresh cycles (RAS-Only or CBR) before proper device operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded. 2. Dependent on cycle rates. 3. Specified values are obtained with minimum cycle time and the output open. 4. Column-address is changed once each Fast page cycle. 5. Enables on-chip refresh and address counters.
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IS41C16105 IS41LV16105
AC CHARACTERISTICS(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.) -50 Min. Max. 84 -- -- -- 50 30 8 9 38
(10, 20)
ISSI
-60 Min. Max. 104 -- -- -- 60 40 10 9 40 14 0 10 0 10 40 12 30 5 10 37 0 5 3 -- 20 5 10 5 0 0 0 10 -- 60 15 30 10K -- 10K -- -- 45 -- -- -- -- -- 30 -- -- -- -- -- -- 15 15 -- -- -- -- -- -- -- -- Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
(R)
Symbol tRC tRAC tCAC tAA tRAS tRP tCAS tCP tCSH tRCD tASR tRAH tASC tCAH tAR tRAD tRAL tRPC tRSH tRHCP tCLZ tCRP tOD tOE tOED tOEHC tOEP tOES tRCS tRRH tRCH tWCH
Parameter Random READ or WRITE Cycle Time Access Time from RAS
(6, 7)
-- 50 13 25 10K -- 10K -- -- 37 -- -- -- -- -- 25 -- -- -- -- -- -- 15 13 -- -- -- -- -- -- -- --
Access Time from CAS(6, 8, 15) Access Time from Column-Address(6) RAS Pulse Width RAS Precharge Time CAS Pulse Width(26) CAS Precharge Time(9, 25) CAS Hold Time
(21)
RAS to CAS Delay Time Row-Address Hold Time
12 0 8
Row-Address Setup Time Column-Address Setup Time Column-Address Hold Time Column-Address Hold Time (referenced to RAS) RAS to Column-Address Delay Time(11) Column-Address to RAS Lead Time RAS to CAS Precharge Time RAS Hold Time(27) RAS Hold Time from CAS Precharge CAS to Output in Low-Z
(15, 29) (21) (20)
0 8 30 10 25 5 8 37 0 5 3 -- 20 5 10 5 0 0 0 8
(20)
CAS to RAS Precharge Time Output Disable Time(19, 28, 29) Output Enable Time(15, 16)
Output Enable Data Delay (Write) OE HIGH Hold Time from CAS HIGH OE HIGH Pulse Width OE LOW to CAS HIGH Setup Time Read Command Setup Time Read Command Hold Time (referenced to RAS)(12) Read Command Hold Time (referenced to CAS)(12, 17, 21) Write Command Hold Time(17, 27)
(17, 20)
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IS41C16105 IS41LV16105
AC CHARACTERISTICS (Continued)(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.) Symbol tWCR tWP tWPZ tRWL tCWL tWCS tDHR tACH tOEH tDS tDH tRWC tRWD tCWD tAWD tPC tRASP tCPA tPRWC tCOH tOFF tWHZ tCLCH tCSR tCHR tORD tREF tT Parameter Write Command Hold Time (referenced to RAS)(17) Write Command Pulse Width(17) WE Pulse Widths to Disable Outputs Write Command to RAS Lead Time Write Command Setup Time
(17) (17, 21)
ISSI
Min. 40 8 10 13 8 0 39 15 8 0 8 108 64 26 39 20 50
(15)
(R)
-50 Max. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 100K 30 -- -- 12 10 -- -- -- -- 16 50
Min. 50 10 10 15 10 0 39 15 10 0 10 133 77 32 47 25 60 -- 68 5 1.6 3 10 5 10 0 -- 1
-60 Max. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 100K 35 -- -- 15 10 -- -- -- -- 16 50
Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ns
Write Command to CAS Lead Time
(14, 17, 20)
Data-in Hold Time (referenced to RAS) Column-Address Setup Time to CAS Precharge during WRITE Cycle OE Hold Time from WE during READ-MODIFY-WRITE cycle(18) Data-In Setup Time(15, 22) Data-In Hold Time(15, 22) READ-MODIFY-WRITE Cycle Time RAS to WE Delay Time during READ-MODIFY-WRITE Cycle(14) CAS to WE Delay Time(14, 20) Column-Address to WE Delay Time(14) Fast Page Mode READ or WRITE Cycle Time(24) RAS Pulse Width Access Time from CAS Precharge READ-WRITE Cycle Time(24) Data Output Hold after CAS LOW Output Buffer Turn-Off Delay from CAS or RAS(13,15,19, 29) Output Disable Delay from WE Last CAS going LOW to First CAS returning HIGH(23) CAS Setup Time (CBR REFRESH)(30, 20) CAS Hold Time (CBR REFRESH)
(30, 21)
-- 56 5 1.6 3 10 5 8 0 -- 1
OE Setup Time prior to RAS during HIDDEN REFRESH Cycle Auto Refresh Period (1,024 Cycles) Transition Time (Rise or Fall)
(2, 3)
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AC TEST CONDITIONS
Output load: Two TTL Loads and 50 pF (Vcc = 5.0V 10%) One TTL Load and 50 pF (Vcc = 3.3V 10%) Input timing reference levels: VIH = 2.4V, VIL = 0.8V (Vcc = 5.0V 10%); VIH = 2.0V, VIL = 0.8V (Vcc = 3.3V 10%) Output timing reference levels: VOH = 2.0V, VOL = 0.8V (Vcc = 5V 10%, 3.3V 10%)
ISSI
(R)
Notes: 1. An initial pause of 200 s is required after power-up followed by eight RAS refresh cycle (RAS-Only or CBR) before proper device operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded. 2. VIH (MIN) and VIL (MAX) are reference levels for measuring timing of input signals. Transition times, are measured between VIH and VIL (or between VIL and VIH) and assume to be 1 ns for all inputs. 3. In addition to meeting the transition rate specification, all input signals must transit between VIH and VIL (or between VIL and VIH) in a monotonic manner. 4. If CAS and RAS = VIH, data output is High-Z. 5. If CAS = VIL, data output may contain data from the last valid READ cycle. 6. Measured with a load equivalent to one TTL gate and 50 pF. 7. Assumes that tRCD - tRCD (MAX). If tRCD is greater than the maximum recommended value shown in this table, tRAC will increase by the amount that tRCD exceeds the value shown. 8. Assumes that tRCD * tRCD (MAX). 9. If CAS is LOW at the falling edge of RAS, data out will be maintained from the previous cycle. To initiate a new cycle and clear the data output buffer, CAS and RAS must be pulsed for tCP. 10. Operation with the tRCD (MAX) limit ensures that tRAC (MAX) can be met. tRCD (MAX) is specified as a reference point only; if tRCD is greater than the specified tRCD (MAX) limit, access time is controlled exclusively by tCAC. 11. Operation within the tRAD (MAX) limit ensures that tRCD (MAX) can be met. tRAD (MAX) is specified as a reference point only; if tRAD is greater than the specified tRAD (MAX) limit, access time is controlled exclusively by tAA. 12. Either tRCH or tRRH must be satisfied for a READ cycle. 13. tOFF (MAX) defines the time at which the output achieves the open circuit condition; it is not a reference to VOH or VOL. 14. tWCS, tRWD, tAWD and tCWD are restrictive operating parameters in LATE WRITE and READ-MODIFY-WRITE cycle only. If tWCS * tWCS (MIN), the cycle is an EARLY WRITE cycle and the data output will remain open circuit throughout the entire cycle. If tRWD * tRWD (MIN), tAWD * tAWD (MIN) and tCWD * tCWD (MIN), the cycle is a READ-WRITE cycle and the data output will contain data read from the selected cell. If neither of the above conditions is met, the state of I/O (at access time and until CAS and RAS or OE go back to VIH) is indeterminate. OE held HIGH and WE taken LOW after CAS goes LOW result in a LATE WRITE (OE-controlled) cycle. 15. Output parameter (I/O) is referenced to corresponding CAS input, I/O0-I/O7 by LCAS and I/O8-I/O15 by UCAS. 16. During a READ cycle, if OE is LOW then taken HIGH before CAS goes HIGH, I/O goes open. If OE is tied permanently LOW, a LATE WRITE or READ-MODIFY-WRITE is not possible. 17. Write command is defined as WE going low. 18. LATE WRITE and READ-MODIFY-WRITE cycles must have both tOD and tOEH met (OE HIGH during WRITE cycle) in order to ensure that the output buffers will be open during the WRITE cycle. The I/Os will provide the previously written data if CAS remains LOW and OE is taken back to LOW after tOEH is met. 19. The I/Os are in open during READ cycles once tOD or tOFF occur. 20. The first CAS edge to transition LOW. 21. The last CAS edge to transition HIGH. 22. These parameters are referenced to CAS leading edge in EARLY WRITE cycles and WE leading edge in LATE WRITE or READMODIFY-WRITE cycles. 23. Last falling CAS edge to first rising CAS edge. 24. Last rising CAS edge to next cycle's last rising CAS edge. 25. Last rising CAS edge to first falling CAS edge. 26. Each CAS must meet minimum pulse width. 27. Last CAS to go LOW. 28. I/Os controlled, regardless UCAS and LCAS. 29. The 3 ns minimum is a parameter guaranteed by design. 30. Enables on-chip refresh and address counters.
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IS41C16105 IS41LV16105
FAST-PAGE-MODE READ CYCLE
ISSI
tRC tRAS tRP
(R)
RAS
tCSH tCRP tRCD tRSH tCAS tCLCH tRRH
UCAS/LCAS
tAR tASR tRAD tRAH tRAL tASC tCAH
ADDRESS WE
Row
tRCS
Column
tRCH
Row
tAA tRAC tCAC tCLC
tOFF(1)
I/O
Open
tOE
Valid Data
tOD
Open
OE
tOES
Don't Care
Note: 1. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last.
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IS41C16105 IS41LV16105
FAST PAGE MODE READ-MODIFY-WRITE CYCLE
ISSI
tRASP tRP
(R)
RAS
tCSH tCAS tCRP tRCD tCP tPRWC tCAS tCP tRSH tCAS tCRP
UCAS/LCAS
tAR tRAH tASR tRAD tASC tCAH tCPWD tASC tAR tCWL tRWD tAWD tCWD tCAH tCPWD tRAL tCAH tASC
ADDRESS
Row
Column
Column
tCWL tAWD tCWD
Column
tCWL tRWL tWP tAWD tCWD
tRCS
tWP
tWP
WE
tAA tCAC tCAC tOEA tOEA tAA tCAC tOEA tAA
OE
tRAC tCLZ
tOEZ tOED tDH tDS tCLZ
OUT IN OUT
tOEZ tOED tDH tDS
IN
tOEZ tOED tDH tCLZ
OUT IN
tDS
I/O0-I/O15
Don't Care
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IS41C16105 IS41LV16105
FAST-PAGE-MODE EARLY WRITE CYCLE (OE = DON'T CARE)
ISSI
tRC tRAS tRP
(R)
RAS
tCSH tCRP tRCD tRSH tCAS tCLCH
UCAS/LCAS
tAR tASR tRAD tRAH tASC tRAL tCAH tACH
ADDRESS
Row
Column
tCWL tRWL tWCR tWCS tWCH tWP
Row
WE
tDHR tDS tDH
I/O
Valid Data
Don't Care
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IS41C16105 IS41LV16105
ISSI
tRWC tRAS tRP
(R)
FAST-PAGE-MODE READ WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE Cycles)
RAS
tCSH tCRP tRCD tRSH tCAS tCLCH
UCAS/LCAS
tAR tASR tRAD tRAH tRAL tASC tCAH tACH
ADDRESS
Row
tRCS
Column
tRWD tCWD tAWD
Row
tCWL tRWL tWP
WE
tAA tRAC tCAC tCLZ tDS tDH
I/O
Open
tOE
Valid DOUT
tOD
Valid DIN
Open
tOEH
OE
Don't Care
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IS41C16105 IS41LV16105
FAST PAGE MODE EARLY WRITE CYCLE
tRASP
ISSI
tRP tRHCP tRSH tCAS tCP tCRP
(R)
RAS
tCSH tCAS tCRP tRCD tCP tPC tCAS
UCAS/LCAS
tAR tRAL tRAH tASR tRAD tASC tCAH tASC tAR tCWL tWCS tWP tWCH tWCS tWP tCAH tASC tCAH
ADDRESS
Row
Column
Column
tCWL tWCH tWCS
Column
tCWL tWCH tWP
WE
tWCR
OE
tDHR tDS tDH tDS tDH tDS tDH
I/O0-I/O15
Valid DIN
Valid DIN
Valid DIN
Don't Care
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AC WAVEFORMS READ CYCLE (With WE-Controlled Disable)
RAS
tCSH tCRP tRCD tCAS tCP
ISSI
(R)
UCAS/LCAS
tAR tASR tRAD tRAH tASC tCAH tASC
ADDRESS WE
Row
tRCS
Column
tRCH tRCS
Column
tAA tRAC tCAC tCLZ
tWHZ
tCLZ
I/O
Open
tOE
Valid Data
Open
tOD
OE
Don't Care
RAS-ONLY REFRESH CYCLE (OE, WE = DON'T CARE)
tRC tRAS tRP
RAS
tCRP tRPC
UCAS/LCAS
tASR tRAH
ADDRESS I/O
Row Open
Row
Don't Care
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IS41C16105 IS41LV16105
CBR REFRESH CYCLE (Addresses; WE, OE = DON'T CARE)
ISSI
tRP tRAS tRP tRAS
(R)
RAS
tRPC tCP tCHR tCSR tRPC tCSR tCHR
UCAS/LCAS I/O Open
HIDDEN REFRESH CYCLE(1) (WE = HIGH; OE = LOW)
tRAS
tRP
tRAS
RAS
tCRP tRCD tRSH tCHR
UCAS/LCAS
tAR tASR tRAD tRAH tASC tRAL tCAH
ADDRESS
Row
Column
tAA tRAC tCAC tCLZ tOFF(2)
I/O
Open
tOE tORD
Valid Data
Open
tOD
OE
Don't Care
Notes: 1. A Hidden Refresh may also be performed after a Write Cycle. In this case, WE = LOW and OE = HIGH. 2. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last.
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IS41C16105 IS41LV16105
ORDERING INFORMATION : 5V Commercial Range: 0C to 70C
Speed (ns) Order Part No. 50 60 IS41C16105-50K IS41C16105-50T IS41C16105-60K IS41C16105-60T Package 400-mil 400-mil 400-mil 400-mil SOJ TSOP (Type II) SOJ TSOP (Type II)
ISSI
(R)
Extended Range: -30C to 85C
Speed (ns) Order Part No. 50 60 IS41C16105-50KE IS41C16105-50TE IS41C16105-60KE IS41C16105-60TE Package 400-mil 400-mil 400-mil 400-mil SOJ TSOP (Type II) SOJ TSOP (Type II)
Industrial Range: -40C to 85C
Speed (ns) Order Part No. 50 60 IS41C16105-50KI IS41C16105-50TI IS41C16105-60KI IS41C16105-60TI Package 400-mil 400-mil 400-mil 400-mil SOJ TSOP (Type II) SOJ TSOP (Type II)
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. A 03/03/00
17
IS41C16105 IS41LV16105
ORDERING INFORMATION : 3.3V Commercial Range: 0C to 70C
Speed (ns) Order Part No. 50 60 Package IS41LV16105-50K 400-mil SOJ IS41LV16105-50T 400-mil TSOP (Type II) IS41LV16105-60K 400-mil SOJ IS41LV16105-60T 400-mil TSOP (Type II)
ISSI
(R)
Extended Range: -30C to 85C
Speed (ns) Order Part No. 50 60 Package IS41LV16105-50KE 400-mil SOJ IS41LV16105-50TE 400-mil TSOP (Type II) IS41LV16105-60KE 400-mil SOJ IS41LV16105-60TE 400-mil TSOP (Type II)
Industrial Range: -40C to 85C
Speed (ns) Order Part No. 50 60 Package IS41LV16105-50KI 400-mil SOJ IS41LV16105-50TI 400-mil TSOP (Type II) IS41LV16105-60KI 400-mil SOJ IS41LV16105-60TI 400-mil TSOP (Type II)
ISSI
(R)
Integrated Silicon Solution, Inc.
2231 Lawson Lane Santa Clara, CA 95054 Tel: 1-800-379-4774 Fax: (408) 588-0806 E-mail: sales@issi.com www.issi.com
18
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. A 03/03/00

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